Vacuum Furnace for Purification of Ingot by Silicon Melting

Vacuum Furnace for Purification of Ingot by Silicon Melting

  • vacuum heat treatment furnace

  • Model: CHV-866
  • load: 1200KG
  • temperature: 1350 ℃
  • uniformity: 5 ℃

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Vacuum Furnace for Purification of Ingot by Silicon Melting Characteristic

1. IGBT medium frequency induction power supply

2. Using quartz or high purity graphite crucible

3. Using high purity graphite and high grade hard carbon felt

4. Servo-controlled pull-down directional solidification

5. Servo control range is 0.03mm-3mm/min

6. Directional solidification rate: 0.1mm-0.5mm/Min

Vacuum Furnace for Purification of Ingot by Silicon Melting technical parameter

Model Working Size
( mm )
load
(Kg)
maximum temperature
(℃)
Temperature uniformity
(±℃)
Extreme pressure
( Pa )
Pressure rise rate
(Pa/h)
Air cooling pressure
(bar )
CHV-433 450X300X300 80 1320 5 4.0E -1

/

6.7E-3

0.6 6/10
CHV-644 600X400X400 200
CHV-755 700X500X500 300
CHV-966 900X600X600 500
CHV-1288 1200X800X800 800

Vacuum Furnace for Purification of Ingot by Silicon Melting exhibitions

Vacuum Furnace for Purification of Ingot by Silicon Melting

Vacuum Furnace for Purification of Ingot by Silicon Melting

small vacuum induction hardening furnace Detail display

Vacuum Furnace for Purification of Ingot by Silicon Melting

Vacuum Furnace for Purification of Ingot by Silicon Melting factory

Vacuum Furnace for Purification of Ingot by Silicon Melting